Direct observation of dangling bond motion in disordered silicon

Mechanisms of metastability in hydrogenated amorphous silicon

We survey theoretical approaches to understanding the diverse metastable behavior in hydrogenated amorphous silicon. We discuss a recently developed network-rebonding model involving bonding rearrangements of silicon and hydrogen atoms. Using tight-binding molecular dynamics we find non-radiative recombination can break weak silicon bonds with low activation energies, producing dangling bond–fl...

Metastability of amorphous silicon from silicon network rebonding.

We propose a network rebonding model for light-induced metastability in amorphous silicon, involving bonding rearrangements of silicon and hydrogen atoms. Nonradiative recombination breaks weak silicon bonds and generates dangling bond-floating bond pairs, with very low activation energies. The transient floating bonds annihilate, generating local hydrogen motion. Charged defects are also found...

Abstract for an Invited Paper for the MAR08 Meeting of The American Physical Society Dangling-bond defects and hydrogen passivation in germanium

for an Invited Paper for the MAR08 Meeting of The American Physical Society Dangling-bond defects and hydrogen passivation in germanium JUSTIN R. WEBER, Department of Physics, University of California, Santa Barbara, California 93106-9530, USA The application of germanium in complementary metal-oxide semiconductor (CMOS) technology is hampered by high interface-state densities, the microscopic ...

Microscopic mechanisms for creation and removal of metastable dangling bonds in hydrogenated amorphous silicon

We present a microscopic model for metastable Si dangling-bond defect creation in hydrogenated amorphous silicon, which is applicable to both light-induced defect creation in solar cells ~Staebler-Wronski effect! and bias-stress-induced defect creation in thin-film transistors. Light or gate bias causes electron-hole pairs or electrons, respectively, to be localized on short, weak Si-Si bonds, ...

Incoherent transport through molecules on silicon in the vicinity of a dangling bond